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INTEGRATED CIRCUITS
DATA SHEET
TDA1015 1 to 4 W audio power amplifier
Product specification File under Integrated Circuits, IC01 November 1982
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 load impedance. The very low applicable supply voltage of 3,6 V permits 6 V applications. Special features are: * single in-line (SIL) construction for easy mounting * separated preamplifier and power amplifier * high output power * thermal protection * high input impedance * low current drain * limited noise behaviour at radio frequencies QUICK REFERENCE DATA Supply voltage range Peak output current Output power at dtot= 10% VP = 12 V; RL = 4 VP = 9 V; RL = 4 VP = 6 V; RL = 4 Total harmonic distortion at Po = 1 W; RL = 4 Input impedance preamplifier (pin 8) power amplifier (pin 6) Total quiescent current Operating ambient temperature Storage temperature PACKAGE OUTLINE 9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13. |Zi| |Zi| Itot Tamb Tstg > typ. typ. 100 20 14 k k mA C C Po Po Po dtot typ. typ. typ. typ. 4,2 2,3 1,0 0,3 W W W % VP IOM 3,6 to 18 max. 2,5 V A
-25 to + 150 -55 to + 150
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
November 1982
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Fig.1 Circuit diagram.
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
RATINGS Limiting values in accordance with Absolute Maximum System (IEC 134) Supply voltage Peak output current Total power dissipation Storage temperature Operating ambient temperature A.C. short-circuit duration of load during sine-wave drive; VP = 12 V tsc max. VP IOM Tstg Tamb max. max.
TDA1015
18 2,5
V A C C hours
see derating curve Fig.2 -55 to + 150 -25 to + 150 100
Fig.2 Power derating curve.
HEATSINK DESIGN Assume VP = 12 V; RL = 4 ; Tamb = 45 C maximum. The maximum sine-wave dissipation is 1,8 W. 150 - 45 Rth j-a = Rth j-tab + Rth tab-h + Rth h-a = --------------------- = 58 K/W. 1, 8 Where Rth j-a of the package is 45 K/W, so no external heatsink is required.
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
D.C. CHARACTERISTICS Supply voltage range Repetitive peak output current Total quiescent current at VP = 12 V VP IORM Itot < typ. < 3,6 to 18 2 14 25
TDA1015
V A mA mA
A.C. CHARACTERISTICS Tamb = 25 C; VP = 12 V; RL = 4 ; f = 1 kHz unless otherwise specified; see also Fig.3. A.F. output power at dtot = 10% (note 1) with bootstrap: VP = 12 V; RL = 4 VP = 9 V; RL = 4 VP = 6 V; RL = 4 without bootstrap: VP = 12 V; RL = 4 Voltage gain: preamplifier (note 2) power amplifier total amplifier Total harmonic distortion at Po = 1,5 W Frequency response; -3 dB (note 3) Input impedance: preamplifier (note 4) power amplifier Output impedance preamplifier Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2) Noise output voltage (r.m.s. value; note 5) RS = 0 RS = 10 k Ripple rejection (note 6); f = 100 Hz Vn(rms) Vn(rms) RR typ. typ. typ. typ. 0,2 0,5 8 38 mV mV V dB |Zi1| |Zi2| |Zo1| Vo(rms) > typ. typ. typ. typ. 100 200 20 1 0,8 k k k k V Gv1 Gv2 Gv tot dtot B typ. typ. typ. typ. < 23 29 52 49 to 55 0,3 1,0 60 Hz to 15 dB dB dB dB % % kHz Po typ. 3,0 W Po Po Po typ. typ. typ. 4,2 2,3 1,0 W W W
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Vn(rms)
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
Notes 1. Measured with an ideal coupling capacitor to the speaker load. 2. Measured with a load resistor of 20 k.
TDA1015
3. Measured at Po = 1 W; the frequency response is mainly determined by C1 and C3 for the low frequencies and by C4 for the high frequencies. 4. Independent of load impedance of preamplifier. 5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave). 6. Ripple rejection measured with a source impedance between 0 and 2 k (maximum ripple amplitude: 2 V). 7. The tab must be electrically floating or connected to the substrate (pin 9).
Fig.3 Test circuit.
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
APPLICATION INFORMATION
TDA1015
Fig.4 Circuit diagram of a 1 to 4 W amplifier.
Fig.5 Total quiescent current as a function of supply voltage.
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.6
Total harmonic distortion as a function of output power across RL; with bootstrap; - - - without bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).
Fig.7
Output power across RL as a function of supply voltage with bootstrap; dtot = 10%; typical values. The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.8 Voltage gain as a function of frequency; Po relative to 0 dB = 1 W; VP = 12 V; RL = 4 .
Fig.9 Total harmonic distortion as a function of frequency; P = 1 W; VP = 12 V; RL = 4 .
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.10 Ripple rejection as a function of R2 (see Fig.4); RS = 0; typical values.
Fig.11 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is adapted for obtaining a constant bandwidth.
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.12 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier; B = 5 kHz; RS = 0; typical values.
Fig.13 Voltage gain as a function of R2 (see Fig.4).
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
PACKAGE OUTLINE SIL9MPF: plastic single in-line medium power package with fin; 9 leads
TDA1015
SOT110-1
D
D1 q P P1 A2
A3 q1 q2
A A4 seating plane E pin 1 index
L 1 Z b2 e b b1 wM 9 Q
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 18.5 17.8 A2 max. 3.7 A3 8.7 8.0 A4 15.8 15.4 b 1.40 1.14 b1 0.67 0.50 b2 1.40 1.14 c 0.48 0.38 D (1) 21.8 21.4 D1 21.4 20.7 E (1) 6.48 6.20 e 2.54 L 3.9 3.4 P 2.75 2.50 P1 3.4 3.2 Q 1.75 1.55 q 15.1 14.9 q1 4.4 4.2 q2 5.9 5.7 w 0.25 Z (1) max. 1.0
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT110-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-02-25
November 1982
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Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
SOLDERING Introduction
TDA1015
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
November 1982
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